Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

SKU:
SR_2009-39-pdf
$5.00
(Inc. GST)
$4.35
(Ex. GST)
Write a Review

Carder, D.A.; Markwitz, A. 2009 Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon. Lower Hutt, N.Z.: GNS Science. GNS Science report 2009/39 76 p.

Abstract: This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels ‘industrial’ and ‘experimental’. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28Si+, 14N+ and 12C+ into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si30C61N9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12C+ and 14N+ at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (auth)