Fang, F.; Kennedy, J.V.; Futter, R.J.; Markwitz, A. 2010 ZnO nanorods produced with the GNS arc discharge apparatus Lower Hutt, N.Z.: GNS Science. GNS Science report 2010/24 29 p.
Abstract: As an important wide band gap (Eg = 3.37 eV) semiconductor, zinc oxide (ZnO) has received widespread attention in optical and electronic industries, because of its distinctive electrical, optoelectronic and piezoelectric properties. In recent years, one-dimensional (1D) ZnO nanostructures have attracted a great attention due to its unique and novel applications in optics, optoelectronics, catalysis, and piezoelectricity. Up to now, various fabrication techniques have been established for the growth of ZnO nanorods. However, these growth methods either require relatively high temperature during synthesis procedure or lack suitability for mass fabrication or inevitably introduce unwanted impurities. Therefore, it is highly desirable to develop an efficient, simple and economical method to mass produce ZnO nanorods for industrial applications. We successfully synthesized high purity ZnO nanorods using GNS arc discharge apparatus. Different oxygen partial pressures were applied in the arc discharge chamber to modulate the electrical properties of the as-synthesized ZnO nanorods. Also magnetic material was selected to dope the ZnO nanorods during arc discharge. Scanning electron microscopy (SEM) and X-ray diffraction were carried out to analyze the morphology and structure of as-synthesized ZnO nanorods. The ion beam analysis technique of proton induced X-ray emission (PIXE) was performed to probe the impurities in the ZnO nanorods. Photoluminescence (PL) was carried out to analyze the optical properties of the assynthesized ZnO nanorods. Results demonstrated that arc discharge is a promising way of fabricating ZnO nanorods, which is simple, cheap, efficient and suitable for massive production. (auth)