Diffusion of Sn in (100) Si under electron beam annealing following dual implantations Sn/Si, Sn/Ne, Sn/C, Sn/N

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SR_2011-030-pdf
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Darfeuille, L.; Markwitz, A. 2012 Diffusion of Sn in (100) Si under electron beam annealing following dual implantations Sn/Si, Sn/Ne, Sn/C, Sn/N. Lower Hutt, N.Z.: GNS Science. GNS Science report 2011/30 42 p.


Abstract: Ion implantation and the set-up and use of the GNS ion implanters is explained in detail in the introduction of the report. Electron beam annealing and RBS are briefly outlined. For the experiment, (100) Si was dual implanted with 28Si+/118Sn+ (20 and 20 keV), 20Ne+/118Sn+ (20 and 20 keV), 13C+/118Sn+ (10 and 20 keV, and 25 and 20 keV) and 15N+/118Sn+ (85 and 20 keV) ions to peak concentrations of typically 1 at% for Si, Ne and C and to 20% for N and Sn. The implanted samples were electron beam annealed at 600 oC for different annealing duration with a gradient of temperature of 5 oC s-1 under high vacuum conditions. Results from RBS measurements are reported. (auth)